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| automotive grade gds gate drain source d-pak AUIRFR5410 features advanced planar technology p-channel mosfet low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this cellular planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. www.kersemi.com 1 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. v (br)dss -100v r ds(on) max. 0.205 ? i d -13a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 1.9 r ? ja junction-to-ambient (pcb mount) ??? 50 c/w r ? ja junction-to-ambient ??? 110 -55 to + 150 300 66 0.53 20 max. -13 -8.2 -52 -5.0 6.3 194 -8.4 s d g 2 www.kersemi.com !"# $ % & ' ( )*+, - ( . /, ( ) ? , 0 ( 12 34 $ 5 & i sd ? 12 34, ? 46, 7 ? 7 , ' ? )*+ 8 ?? 96 " " ?? : ' %# 0184;, - #% 184; " #% "#" < 0 5=)9> "## ? # # @ a 8+b $5 1. # 1 c & 5# " # %## # "a % # "# # d4>1==. r ?? is measured at tj approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -100 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.12 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.205 ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v gfs forward transconductance 3.2 ??? ??? s i dss drain-to-source leakage current ??? ??? -25 a ??? ??? -250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 58 q gs gate-to-source charge ??? ??? 8.3 nc q gd gate-to-drain ("miller") charge ??? ??? 32 t d(on) turn-on delay time ??? 15 ??? t r rise time ??? 58 ??? t d(off) turn-off delay time ??? 45 ??? ns t f fall time ??? 46 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 760 ??? c oss output capacitance ??? 260 ??? pf c rss reverse transfer capacitance ??? 170 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -13 (body diode) a i sm pulsed source current ??? ??? -52 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 130 190 ns q rr reverse recovery charge ??? 650 970 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v gs = -10v v dd = =-50v i d = -8.4a r g = 9.1 ? t j = 25c, i s = -7.8a, v gs = 0v t j = 25c, i f = -8.4a di/dt = 100a/ s conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -7.8a v ds = v gs , i d = -250 a v ds = -100v, v gs = 0v v ds = -80v, v gs = 0v, t j = 150c mosfet symbol showing the integral reverse p-n junction diode. v ds = -25v, i d = -7.8a i d = -8.4a v ds = -80v conditions r d = 6.2 ? v gs = 0v v ds = -25v ? = 1.0mhz v gs = 20v v gs = -20v www.kersemi.com 3 !! ""#! $ % &$' ()(* # * " qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (1125v) aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m2 (200v) aec-q101-002 human body model class h1b (1000v) aec-q101-001 4 www.kersemi.com +# ,- ."/# /0 - ' /0 - ' /0 / ' 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 4 5 6 7 8 9 10 v = 10v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -14a www.kersemi.com 5 1 %# #2 - 3& /0 4 ' 3." 4 2 . 3 /0 ' ." 2 . 3 /0 2 5 . 3 0.1 1 10 100 0.2 0.8 1.4 2.0 2.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 5 10 15 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -8.4a v = -20v ds v = -50v ds v = -80v ds 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 6 www.kersemi.com 1 %# #$6/ / # # 78 ' 1 %# # ' ." ' /# 2 3/#/' 2 3/#9 6# 7 17 ???? ??????? 7 7 < ' + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.kersemi.com 7 4 ' 3/' : 4 ' 39 6# 1 %# #&6 $30 ." ' q g q gs q gd v g charge (). d.u.t. v ds i d i g -3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - ; # 69 6# ; # 6/' t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 1 e 7 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -3.5a -4.9a -7.8a 8 www.kersemi.com p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 7 ??? "## ??? 0 "## 5"# @@ ??? < ' 1 " < ' < +" - # +# # ????? -# 0"" ???? # 8 ???? -# - f 0"" + ' %# < 8# #% < ' %# 81+ 7 => <<< 7 ( ) 7 %# -#" - 97 " 5' ?$@5$/2 www.kersemi.com 9 d-pak part marking information ' aba 99b9c9c &b& #6 + # d3 d' 10 www.kersemi.com tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch |
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